Degradation mechanism of ferroelectric properties in Pt/Bi4-xLaxTi3O12/Pt capacitors during forming gas annealing

被引:22
作者
Chon, U
Kim, KB
Jang, HM [1 ]
机构
[1] Pohang Univ Sci & Technol, POSTECH, Dept Mat Sci & Engn, Pohang 790784, South Korea
[2] Pohang Univ Sci & Technol, POSTECH, Natl Res Lab Ferroelecr Phase Transit, Pohang 790784, South Korea
[3] Res Inst Ind Sci & Technol RIST, Pohang 790784, South Korea
关键词
D O I
10.1063/1.1402640
中图分类号
O59 [应用物理学];
学科分类号
摘要
Degradation mechanism of ferroelectric properties in the Pt/Bi4-xLaxTi3O12/Pt (Pt/BLT/Pt) capacitors during forming gas annealing (FGA) was systematically investigated by examining ferroelectric responses and spatial distributions of relevant species using secondary ion mass spectrometry. It was shown that the degradation of ferroelectric properties during FGA was not originated from the oxygen loss induced by a reducing atmosphere but was mainly caused by protons catalytically dissociated from molecular hydrogen (H-2) by the top Pt electrode. The following sequential mechanism has been identified from the present study: (i) the adsorption and dissociation of H-2 to produce protons and electrons by the top Pt electrode, (ii) the columnar penetration of protons into the BLT film, accelerated by the region of negatively charged Bi-site vacancies near the bottom electrode, and (iii) the decomposition of perovskite phase after FGA at 400 degreesC. (C) 2001 American Institute of Physics.
引用
收藏
页码:2450 / 2452
页数:3
相关论文
共 21 条
[1]  
ABDELGHAFAR KK, 1996, APPL PHYS LETT, V69, P3188
[2]   Oxide electrodes as barriers to hydrogen damage of Pb(Zr,Ti)O3-based ferroelectric capacitors [J].
Aggarwal, S ;
Perusse, SR ;
Nagaraj, B ;
Ramesh, R .
APPLIED PHYSICS LETTERS, 1999, 74 (20) :3023-3025
[3]   Effect of hydrogen on Pb(Zr, Ti)O3-based ferroelectric capacitors [J].
Aggarwal, S ;
Perusse, SR ;
Tipton, CW ;
Ramesh, R ;
Drew, HD ;
Venkatesan, T ;
Romero, DB ;
Podobedov, VB ;
Weber, A .
APPLIED PHYSICS LETTERS, 1998, 73 (14) :1973-1975
[4]   Recovery of forming gas damaged Pb(Nb, Zr, Ti)O3 capacitors [J].
Aggarwal, S ;
Perusse, SR ;
Kerr, CJ ;
Ramesh, R ;
Romero, DB ;
Evans, JT ;
Boyer, L ;
Velasquez, G .
APPLIED PHYSICS LETTERS, 2000, 76 (07) :918-920
[5]   Fatigue-free behavior of highly oriented Bi3.25La0.75Ti3O12 thin films grown on Pt/Ti/SiO2/Si(100) by metalorganic solution decomposition [J].
Chon, U ;
Yi, GC ;
Jang, HM .
APPLIED PHYSICS LETTERS, 2001, 78 (05) :658-660
[6]  
CHON U, IN PRESS J MAT RES
[7]   Electrode dependence of hydrogen-induced degradation in ferroelectric Pb(Zr,Ti)O-3 and SrBi2Ta2O9 thin films [J].
Han, JP ;
Ma, TP .
APPLIED PHYSICS LETTERS, 1997, 71 (09) :1267-1269
[8]   Protection of SrBi2Ta2O9 ferroelectric capacitors from hydrogen damage by optimized metallization for memory applications [J].
Hong, SK ;
Suh, CW ;
Lee, CG ;
Lee, SW ;
Kang, EY ;
Kang, NS ;
Hwang, CS ;
Kwon, OS .
APPLIED PHYSICS LETTERS, 2000, 77 (01) :76-78
[9]   Studies of hydrogen-induced degradation processes in SrBi2Ta2O9 ferroelectric film-based capacitors [J].
Im, J ;
Auciello, O ;
Krauss, AR ;
Gruen, DM ;
Chang, RPH ;
Kim, SH ;
Kingon, AI .
APPLIED PHYSICS LETTERS, 1999, 74 (08) :1162-1164
[10]   THE DEGRADATION OF FERROELECTRIC PROPERTIES OF PZT THIN-FILMS DUE TO PLASMA DAMAGE [J].
ISHIHARA, K ;
ISHIKAWA, T ;
HAMADA, K ;
ONISHI, S ;
KUDO, J ;
SAKIYAMA, K .
INTEGRATED FERROELECTRICS, 1995, 6 (1-4) :301-307