Degradation mechanism of ferroelectric properties in Pt/Bi4-xLaxTi3O12/Pt capacitors during forming gas annealing

被引：22

作者：

Chon, U

Kim, KB

Jang, HM ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, POSTECH, Dept Mat Sci & Engn, Pohang 790784, South Korea

[2] Pohang Univ Sci & Technol, POSTECH, Natl Res Lab Ferroelecr Phase Transit, Pohang 790784, South Korea

[3] Res Inst Ind Sci & Technol RIST, Pohang 790784, South Korea

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 15期

关键词：

D O I：

10.1063/1.1402640

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Degradation mechanism of ferroelectric properties in the Pt/Bi4-xLaxTi3O12/Pt (Pt/BLT/Pt) capacitors during forming gas annealing (FGA) was systematically investigated by examining ferroelectric responses and spatial distributions of relevant species using secondary ion mass spectrometry. It was shown that the degradation of ferroelectric properties during FGA was not originated from the oxygen loss induced by a reducing atmosphere but was mainly caused by protons catalytically dissociated from molecular hydrogen (H-2) by the top Pt electrode. The following sequential mechanism has been identified from the present study: (i) the adsorption and dissociation of H-2 to produce protons and electrons by the top Pt electrode, (ii) the columnar penetration of protons into the BLT film, accelerated by the region of negatively charged Bi-site vacancies near the bottom electrode, and (iii) the decomposition of perovskite phase after FGA at 400 degreesC. (C) 2001 American Institute of Physics.

引用

页码：2450 / 2452

页数：3

共 21 条

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