Magnesium oxide gate dielectrics grown on GaN using an electron cyclotron resonance plasma

Magnesium oxide was grown by gas source molecular beam epitaxy on (0001) oriented metalorganic chemical vapor deposition n-GaN using elemental Mg and atomic oxygen supplied from an electron cyclotron resonance plasma source. X-ray diffraction (XRD) indicated that the oxide was single crystal for T-SUB= 350 degreesC and mostly polycrystalline for T-SUB= 100 degreesC. Reflection high energy electron diffraction suggests that the films deposited at the lower temperature begin with a single crystal nucleation layer then quickly become polycrystalline. For both growth temperatures, the magnesium oxide was highly textured toward the (111) direction, with the polycrystalline samples showing a broader XRD peak but smoother surfaces. Single crystal MgO grown at 350 degreesC had high current leakage, prohibiting electrical measurements. A breakdown field of 2.3 MV/cm and an interface state density of 4 X 10(11) cm(-2)eV(-1) were measured for the polycrystalline (T-SUB=100degreesC) magnesium oxide/GaN heterostructure. (C) 2003 American Vacuum Society.