On the interface state density at In0.53Ga0.47As/oxide interfaces

被引：87

作者：

Brammertz, G. ^{[1
]}

Lin, H-C. ^{[1
]}

Caymax, M. ^{[1
]}

Meuris, M. ^{[1
]}

Heyns, M. ^{[1
]}

Passlack, M. ^{[2
]}

机构：

[1] IMEC VZW, Interuniv Microelect Ctr, B-3001 Louvain, Belgium

[2] TSMC, Adv Transistor Res Div, Belgium Branch, B-3001 Louvain, Belgium

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 20期

关键词：

aluminium compounds; conduction bands; electron density; electronic density of states; gallium compounds; III-V semiconductors; indium compounds; interface states; MIS structures; semiconductor-insulator boundaries; LAYER-DEPOSITED AL2O3; GATE; DIELECTRICS; TRANSISTOR; MOSFETS;

D O I：

10.1063/1.3267104

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors model the capacitance-voltage (CV) behavior of In0.53Ga0.47As metal-oxide-semiconductor (MOS) structures and compare the results to experimental CV-curves. Due to the very low conduction band density of states, ideal III-V MOS structures should present an asymmetric CV behavior, with lower accumulation capacitance on the conduction band side. The absence of this asymmetric CV shape in experimental CV curves points toward the presence of additional states inside the conduction band at the oxide-semiconductor interface. Comparisons between the model and experimental data allow the determination and approximate quantification of a large acceptorlike interface state density above the conduction band edge energy.

引用

页数：3

共 16 条

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