High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3/Ga2O3(Gd2O3) as gate dielectrics

被引：119

作者：

Lin, T. D. ^{[1
]}

Chiu, H. C. ^{[1
]}

Chang, P. ^{[1
]}

Tung, L. T. ^{[1
]}

Chen, C. P. ^{[1
]}

Hong, M. ^{[1
]}

Kwo, J. ^{[2
]}

Tsai, W. ^{[3
]}

Wang, Y. C. ^{[4
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan

[2] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30013, Taiwan

[3] Intel Corp, Santa Clara, CA 95052 USA

[4] WIN Semicond Corp, Tao Yuan 33383, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 03期

关键词：

D O I：

10.1063/1.2956393

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors (MOSFETs) using ultrahigh-vacuum deposited Al2O3/Ga2O3(Gd2O3) (GGO) dual-layer dielectrics and a TiN metal gate were fabricated. For a In0.53Ga0.47As MOSFET using a gate dielectric of Al2O3(2 nm thick)/GGO(5 nm thick), a maximum drain current of 1.05 A/mm, a transconductance of 714 mS/mm, and a peak mobility of 1300 cm(2)/V s have been achieved, the highest ever reported for III-V inversion-channel devices of 1 mu m gate length. (c) 2008 American Institute of Physics.

引用

页数：3

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