High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3/Ga2O3(Gd2O3) as gate dielectrics

被引:119
作者
Lin, T. D. [1 ]
Chiu, H. C. [1 ]
Chang, P. [1 ]
Tung, L. T. [1 ]
Chen, C. P. [1 ]
Hong, M. [1 ]
Kwo, J. [2 ]
Tsai, W. [3 ]
Wang, Y. C. [4 ]
机构
[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan
[2] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30013, Taiwan
[3] Intel Corp, Santa Clara, CA 95052 USA
[4] WIN Semicond Corp, Tao Yuan 33383, Taiwan
关键词
D O I
10.1063/1.2956393
中图分类号
O59 [应用物理学];
学科分类号
摘要
Self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors (MOSFETs) using ultrahigh-vacuum deposited Al2O3/Ga2O3(Gd2O3) (GGO) dual-layer dielectrics and a TiN metal gate were fabricated. For a In0.53Ga0.47As MOSFET using a gate dielectric of Al2O3(2 nm thick)/GGO(5 nm thick), a maximum drain current of 1.05 A/mm, a transconductance of 714 mS/mm, and a peak mobility of 1300 cm(2)/V s have been achieved, the highest ever reported for III-V inversion-channel devices of 1 mu m gate length. (c) 2008 American Institute of Physics.
引用
收藏
页数:3
相关论文
共 24 条
[11]   Metal-oxide-semiconductor capacitors on GaAs with high-k gate oxide and amorphous silicon interface passivation layer -: art. no. 022106 [J].
Koveshnikov, S ;
Tsai, W ;
Ok, I ;
Lee, JC ;
Torkanov, V ;
Yakimov, M ;
Oktyabrsky, S .
APPLIED PHYSICS LETTERS, 2006, 88 (02) :1-3
[12]   1-μm enhancement mode GaAsN-channel MOSFETs with transconductance exceeding 250 mS/mm [J].
Rajagopalan, K. ;
Droopad, R. ;
Abrokwah, J. ;
Zurcher, P. ;
Fejes, P. ;
Passlack, M. .
IEEE ELECTRON DEVICE LETTERS, 2007, 28 (02) :100-102
[13]   Enhancement-mode GaAs n-channel MOSFET [J].
Rajagopalan, Karthik ;
Abrokwah, Jonathan ;
Droopad, Ravi ;
Passlack, Matthias .
IEEE ELECTRON DEVICE LETTERS, 2006, 27 (12) :959-962
[14]   Ga2O3(Gd2O3)/InGaAs enhancement-mode n-channel MOSFET's [J].
Ren, F ;
Kuo, JM ;
Hong, M ;
Hobson, WS ;
Lothian, JR ;
Lin, J ;
Tsai, HS ;
Mannaerts, JP ;
Kwo, J ;
Chu, SNG ;
Chen, YK ;
Cho, AY .
IEEE ELECTRON DEVICE LETTERS, 1998, 19 (08) :309-311
[15]   Demonstration of enhancement-mode p- and m-channel GaAs MOSFETs with Ga2O3(Gd2O3) as gate oxide [J].
Ren, F ;
Hong, M ;
Hobson, WS ;
Kuo, JM ;
Lothian, JR ;
Mannaerts, JP ;
Kwo, J ;
Chu, SNG ;
Chen, YK ;
Cho, AY .
SOLID-STATE ELECTRONICS, 1997, 41 (11) :1751-1753
[16]   1 nm equivalent oxide thickness in Ga2O3(Gd2O3)/In0.2Ga0.8As metal-oxide-semiconductor capacitors [J].
Shiu, K. H. ;
Chiang, T. H. ;
Chang, P. ;
Tung, L. T. ;
Hong, M. ;
Kwo, J. ;
Tsai, W. .
APPLIED PHYSICS LETTERS, 2008, 92 (17)
[17]   Enhancement-mode buried-channel In0.7Ga0.3As/In0.52Al0.48As MOSFETs with high-κ gate dielectrics [J].
Sun, Yanning ;
Kiewra, E. W. ;
Koester, S. J. ;
Ruiz, N. ;
Callegari, A. ;
Fogel, K. E. ;
Sadana, D. K. ;
Fompeyrine, J. ;
Webb, D. J. ;
Locquet, J.-P. ;
Sousa, M. ;
Germann, R. ;
Shiu, K. T. ;
Forrest, S. R. .
IEEE ELECTRON DEVICE LETTERS, 2007, 28 (06) :473-475
[18]   Advances in GaAs MOSFET's using Ga2O3(Gd2O3) as gate oxide [J].
Wang, YC ;
Hong, M ;
Kuo, JM ;
Mannaerts, JP ;
Kwo, J ;
Tsai, HS ;
Krajewski, JJ ;
Weiner, JS ;
Chen, YK ;
Cho, AY .
COMPOUND SEMICONDUCTOR SURFACE PASSIVATION AND NOVEL DEVICE PROCESSING, 1999, 573 :219-225
[19]   High performance submicron inversion-type enhancement-mode InGaAs MOSFETs with ALD Al2O3, HfO2, and HfAlO as gate dielectrics [J].
Xuan, Y. ;
Wu, Y. Q. ;
Shen, T. ;
Yang, T. ;
Ye, P. D. .
2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2007, :637-640
[20]   High-performance inversion-type enhancement-mode InGaAs MOSFET with maximum drain current exceeding 1 A/mm [J].
Xuan, Y. ;
Wu, Y. Q. ;
Ye, P. D. .
IEEE ELECTRON DEVICE LETTERS, 2008, 29 (04) :294-296