共 24 条
[13]
Enhancement-mode GaAs n-channel MOSFET
[J].
IEEE ELECTRON DEVICE LETTERS,
2006, 27 (12)
:959-962
[18]
Advances in GaAs MOSFET's using Ga2O3(Gd2O3) as gate oxide
[J].
COMPOUND SEMICONDUCTOR SURFACE PASSIVATION AND NOVEL DEVICE PROCESSING,
1999, 573
:219-225
[19]
High performance submicron inversion-type enhancement-mode InGaAs MOSFETs with ALD Al2O3, HfO2, and HfAlO as gate dielectrics
[J].
2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2,
2007,
:637-640