Electrical study of sulfur passivated In0.53Ga0.47As MOS capacitor and transistor with ALD Al2O3 as gate insulator

被引：93

作者：

Lin, Han-Chung ^{[1
]}

Wang, Wei-E. ^{[2
]}

Brammertz, Guy ^{[1
]}

Meuris, Marc ^{[1
]}

Heyns, Marc ^{[1
]}

机构：

[1] IMEC, B-3001 Leuven, Belgium

[2] Intel Corp, Santa Clara, CA 95052 USA

来源：

MICROELECTRONIC ENGINEERING | 2009年 / 86卷 / 7-9期

关键词：

Inversion channel; III-V; MOSFET; InGaAs on InP; ALD; Sulfur treatment;

D O I：

10.1016/j.mee.2009.03.112

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we compare the interface trap distributions D-it(E) of sulfur treated Al2O3/In0.53Ga0.47As interfaces, which underwent MOS capacitor and transistor fabrication processes. Lower interface trap densities were found close to the conduction band edge for both cases. The inversion channel MOSFET achieves high device performance despite the fact that its oxide-semiconductor interface quality is a notch below that of the MOS capacitor with optimized process. (C) 2009 Elsevier B.V. All rights reserved.

引用

收藏

页码：1554 / 1557

页数：4

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