Microscopic identification of the origin of generation-recombination noise in hydrogenated amorphous silicon with noise-detected magnetic resonance

被引：11

作者：

Goennenwein, STB ^{[1
]}

Bayerl, MW ^{[1
]}

Brandt, MS ^{[1
]}

Stutzmann, M ^{[1
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

PHYSICAL REVIEW LETTERS | 2000年 / 84卷 / 22期

关键词：

D O I：

10.1103/PhysRevLett.84.5188

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Spin-dependent changes in the noise power of undoped amorphous hydrogenated silicon (a-Si:H) are observed under electron spin resonance conditions. The noise-detected magnetic resonance (NDMR) signal has the g value of holes in the valence band tail of a-Si:H. Both the sign of the NDMR signal and the frequency dependence of its intensity can be quantitatively accounted for by a resonant reduction of the generation-recombination noise time constant tau. This identifies hopping in the valence-band tail as the dominant spin-dependent step governing noise in this material.

引用

页码：5188 / 5191

页数：4

共 22 条

[1]

[Anonymous], J PHYS PARIS

[2] 1/F NOISE IN AMORPHOUS-SILICON AND HYDROGENATED AMORPHOUS-SILICON THIN-FILMS [J].

BACIOCCHI, M ;

DAMICO, A ;

VANVLIET, CM .

SOLID-STATE ELECTRONICS, 1991, 34 (12) :1439-1447

[3]

BURGESS RE, 1951, PHILOS MAG, V42, P475

[4] SEMICONDUCTOR IMPURITY ANALYSIS FROM LOW-FREQUENCY NOISE SPECTRA [J].

COPELAND, JA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (01) :50-&

[5] Universal 1/f noise from dissipative self-organized criticality models [J].

De Los Rios, P ;

Zhang, YC .

PHYSICAL REVIEW LETTERS, 1999, 82 (03) :472-475

[6] RECOMBINATION PROCESSES IN A-SI-H - SPIN-DEPENDENT PHOTOCONDUCTIVITY [J].

DERSCH, H ;

SCHWEITZER, L ;

STUKE, J .

PHYSICAL REVIEW B, 1983, 28 (08) :4678-4684

[7] LOW-FREQUENCY FLUCTUATIONS IN SOLIDS - 1-F NOISE [J].

DUTTA, P ;

HORN, PM .

REVIEWS OF MODERN PHYSICS, 1981, 53 (03) :497-516

[8] 1/f-noise study of undoped intrinsic hydrogenated amorphous silicon thin films [J].

Günes, M ;

Johanson, RE ;

Kasap, SO .

PHYSICAL REVIEW B, 1999, 60 (03) :1477-1479

[9] ELECTRON SPIN RESONANCE OF ATOMIC AND MOLECULAR FREE RADICALS TRAPPED AT LIQUID HELIUM TEMPERATURE [J].

JEN, CK ;

FONER, SN ;

COCHRAN, EL ;

BOWERS, VA .

PHYSICAL REVIEW, 1958, 112 (04) :1169-1182

[10] Thermal agitation of electricity in conductors [J].

Johnson, JB .

PHYSICAL REVIEW, 1928, 32 (01) :97-109

← 1 2 3 →