Observation of Coulomb blockade type conductance oscillations up to 50 K in gated InGaAs ridge quantum wires grown by molecular beam epitaxy on InP substrates

被引：20

作者：

Okada, H ^{[1
]}

Fujikura, H ^{[1
]}

Hashizume, T ^{[1
]}

Hasegawa, H ^{[1
]}

机构：

[1] HOKKAIDO UNIV,GRAD SCH ELECT & INFORMAT ENGN,SAPPORO,HOKKAIDO 060,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 3B期

关键词：

quantum wire; InAlAs/InGaAs; selective growth; Shubnikov-de Haas oscillation; conductance oscillation; Coulomb blockade;

D O I：

10.1143/JJAP.36.1672

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InP-based quantum wire (QWR) transistors were successfully fabricated for the first time directly on InAlAs/InGaAs ridge QWRs grown by selective molecular beam epitaxy (MBE) on patterned (001) InP substrates. Each wire showed strong photoluminescence, cathodoluminescence and Shubnikov-de Haas (SdH) oscillations. The behavior of the SdH oscillations confirmed the presence of gate-controlled one-dimensional transport. Near pinch-off, QWR transistors showed Coulomb blockade type conductance oscillations up to 50 K. The effective value of the Coulomb gap was estimated to be 28 mV. Possible mechanisms for quantum dot formation are discussed.

引用

页码：1672 / 1677

页数：6

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