High-resolution transfer printing on GaAs surfaces using alkane dithiol monolayers

被引：72

作者：

Loo, YL

Hsu, JWP

Willett, RL

Baldwin, KW

West, KW

Rogers, JA

机构：

[1] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

[2] Univ Texas, Dept Chem Engn, Austin, TX 78712 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2002年 / 20卷 / 06期

关键词：

D O I：

10.1116/1.1523405

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe a transfer printing technique for directly patterning thin gold films onto GaAs surfaces. This additive transfer process is mediated by the presence of an alkane dithiol monolayer on the wafer surface. The transferred patterns are chemically bound to the wafer surface and they exhibit strong adhesion (i.e., they easily pass Scotch tape adhesion tests.) A variety of gold patterns with a wide range of feature sizes can be printed onto GaAs (100), (110), (211)A, and (211)B using this approach. (C) 2002 American Vacuum Society.

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收藏

页码：2853 / 2856

页数：4

相关论文

共 13 条

[1] X-RAY PHOTOELECTRON-SPECTROSCOPY OF AMMONIUM SULFIDE TREATED GAAS(100) SURFACES [J].

COWANS, BA ;

DARDAS, Z ;

DELGASS, WN ;

CARPENTER, MS ;

MELLOCH, MR .

APPLIED PHYSICS LETTERS, 1989, 54 (04) :365-367

[2] Passivation of GaAs (100) with an adhesion promoting self-assembled monolayer [J].

Hou, T ;

Greenlief, M ;

Keller, SW ;

Nelen, L ;

Kauffman, JF .

CHEMISTRY OF MATERIALS, 1997, 9 (12) :3181-3186

[3] Submicrometer patterning of charge in thin-film electrets [J].

Jacobs, HO ;

Whitesides, GM .

SCIENCE, 2001, 291 (5509) :1763-1766

[4] Nanoelectronic device applications of a chemically stable GaAs structure [J].

Janes, DB ;

Kolagunta, VR ;

Batistuta, M ;

Walsh, BL ;

Andres, RP ;

Liu, J ;

Dicke, J ;

Lauterbach, J ;

Pletcher, T ;

Chen, EH ;

Melloch, MR ;

Peckham, EL ;

Ueng, HJ ;

Woodall, JM ;

Lee, T ;

Reifenberger, R ;

Kubiak, CP ;

Kasibhatla, B .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (04) :1773-1777

[5] FEATURES OF GOLD HAVING MICROMETER TO CENTIMETER DIMENSIONS CAN BE FORMED THROUGH A COMBINATION OF STAMPING WITH AN ELASTOMERIC STAMP AND AN ALKANETHIOL INK FOLLOWED BY CHEMICAL ETCHING [J].

KUMAR, A ;

WHITESIDES, GM .

APPLIED PHYSICS LETTERS, 1993, 63 (14) :2002-2004

[6] Additive, nanoscale patterning of metal films with a stamp and a surface chemistry mediated transfer process: Applications in plastic electronics [J].

Loo, YL ;

Willett, RL ;

Baldwin, KW ;

Rogers, JA .

APPLIED PHYSICS LETTERS, 2002, 81 (03) :562-564

[7] Interfacial chemistries for nanoscale transfer printing [J].

Loo, YL ;

Willett, RL ;

Baldwin, KW ;

Rogers, JA .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2002, 124 (26) :7654-7655

[8] CHEMICAL STUDIES OF THE PASSIVATION OF GAAS SURFACE RECOMBINATION USING SULFIDES AND THIOLS [J].

LUNT, SR ;

RYBA, GN ;

SANTANGELO, PG ;

LEWIS, NS .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (12) :7449-7465

[9] PASSIVATION OF GAAS SURFACE RECOMBINATION WITH ORGANIC THIOLS [J].

LUNT, SR ;

SANTANGELO, PG ;

LEWIS, NS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (04) :2333-2336

[10] OXIDATION OF SULFUR-TREATED GAAS-SURFACES STUDIED BY PHOTOLUMINESCENCE AND PHOTOELECTRON-SPECTROSCOPY [J].

OSHIMA, M ;

SCIMECA, T ;

WATANABE, Y ;

OIGAWA, H ;

NANNICHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1993, 32 (1B) :518-522