Charge injection in individual silicon nanoparticles deposited on a conductive substrate

被引：52

作者：

Mélin, T ^{[1
]}

Deresmes, D ^{[1
]}

Stiévenard, D ^{[1
]}

机构：

[1] Inst Elect Microelect & Nanotechnol, CNRS, UMR 8520, F-59652 Villeneuve Dascq, France

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 26期

关键词：

D O I：

10.1063/1.1532110

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on charge injection in individual silicon nanoparticles deposited on conductive substrates. Charges are injected using a metal-plated atomic force microscope tip, and detected by electric force microscopy (EFM). Due to the screening efficiency of the conductive -substrate, up to similar to200 positive or negative charges can be stored at moderate (<10 V) tip-substrate injection voltage in ∼40 nm high nanoparticles, with discharging time constants of a few minutes. We propose an analytical model in the plane-capacitor approximation to estimate the nanoparticle charge from EFM data. It falls in quantitative agreement with numerical calculations using realistic tip/nanoparticle/substrate geometries. (C) 2002 American Institute of Physics.

引用

页码：5054 / 5056

页数：3

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