Formation of an oriented beta-SiC layer during the initial growth phase of diamond on silicon (100)

The first minutes of bias-enhanced nucleation of chemical vapour deposited (CVD) diamond have been investigated by X-ray photoelectron diffraction (XPD). The orientation of the SiC layer and of the nascent diamond film has been studied. We will show that the bias pretreatment is not responsible for the formation of an oriented beta-SiC film oil silicon (100) and that the contact of the diamond nuclei with an oriented layer is essential for an oriented nucleation. The influence of the substrate heating in a hydrogen plasma before the beginning of the bias treatment on the diamond film orientation will be discussed. (C) 1997 Elsevier Science S.A.