Mask definition by nanoimprint lithography

被引：2

作者：

Lyebyedyev, D ^{[1
]}

Scheer, HC ^{[1
]}

机构：

[1] Univ Gesamthsch Wuppertal, Dept Elect & Informat Engn, D-42119 Wuppertal, Germany

来源：

17TH EUROPEAN CONFERENCE ON MASK TECHNOLOGY FOR INTEGRATED CIRCUITS AND MICROCOMPONENTS | 2001年 / 4349卷

关键词：

D O I：

10.1117/12.425079

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Mask definition was performed by use of nanoimprint lithography and subsequent reactive ion etching in an oxygen plasma. Polystyrene was chosen as a polymer mask material. Different features ranging from 400 nm up to 4 mum were produced in the polymer layer by nanoimprint. Optimisation of the residual layer removal process in oxygen RIE was performed at different pressures and self-bias voltages. Low pressure and high bias voltage are required for high quality mask definition.

引用

页码：82 / 85

页数：4

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