P-type doping of Hf0.6Zr0.4NiSn half-Heusler thermoelectric materials prepared by levitation melting and spark plasma sintering

The Y-doped (Hf0.6Zr0.4)(1-x)YxNiSn (x = 0, 0.01, 0.02, 0.04, 0.06, 0.1, and 0.2) half-Heusler alloys have been prepared by levitation melting and spark plasma sintering. The effect of Y doping on thermoelectric properties of the alloys was investigated in the temperature range of 300-900 K. Y-doped samples had the lower electrical conductivity compared with the parent compound without Y doping. The thermal conductivity had weak dependence on Y doping content. The absolute values of Seebeck coefficient decreased significantly when x < 0.04. The sign of Seebeck coefficient turned from negative to positive at room temperature for x = 0.04 and 0.1, which means that the hole carriers became dominant in these alloys. However, the alloys changed to n-type conduction again at high temperatures. The maximum figure of merit value of about 0.45 was obtained at 780 K for the undoped sample.