Epitaxial ferroelectric PbZrxTi1-xO3 thin films for non-volatile memory applications

被引：9

作者：

Guerrero, C ^{[1
]}

Ferrater, C ^{[1
]}

Roldán, J ^{[1
]}

Trtík, V ^{[1
]}

Sánchez, F ^{[1
]}

Varela, M ^{[1
]}

机构：

[1] Univ Barcelona, Dept Fis Aplicada & Opt, E-08028 Barcelona, Spain

来源：

MICROELECTRONICS RELIABILITY | 2000年 / 40卷 / 4-5期

关键词：

D O I：

10.1016/S0026-2714(99)00318-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Epitaxial ferroelectric PbZrxTi1-xO3 (PZT) thin film capacitors with SrRuO3 (SRO) bottom electrodes have been fabricated by pulsed laser deposition on LaAlO3 (001) substrates. X-ray diffraction measurements revealed that epitaxial heterostructures with a high crystalline quality were obtained. Ferroelectric capacitors were defined by thermal evaporation of aluminium contact pads onto the PZT films. Remnant polarizations of about 13 mu C/cm(2) and coercive fields of about 150 kV/cm are obtained at a frequency of 10 Hz. The capacitors show very little fatigue of the remnant polarization with cumulative switching. A tendency to imprint, arising from the use of asymmetric electrodes, is observed. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：671 / 674

页数：4

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