Evidence for multiple atomic structure for the {10(1)over-bar-0} inversion domain boundaries in GaN layers

被引：47

作者：

Potin, V ^{[1
]}

Nouet, G ^{[1
]}

Ruterana, P ^{[1
]}

机构：

[1] Inst Sci Mat & Rayonnement, Lab Etud & Rech Mat, CNRS, UPRESA 6004, F-14050 Caen, France

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 07期

关键词：

D O I：

10.1063/1.123418

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Atomic structure investigation has been carried out on {10 (1) over bar 0} inversion domain boundaries in GaN layers grown by molecular beam epitaxy. A method based on the comparison of the stacking sequences of GaN on both sides of the boundary is proposed in order to distinguish between different models. Experimental evidence is shown for two atomic configurations of the boundary plane. Depending probably on the growth conditions, the Holt model, which has been theoretically characterized as highly energetic, can also exist for the {10 (1) over bar 0} inversion domain boundaries in GaN epitaxial layers. (C) 1999 American Institute of Physics. [S0003-6951(99)04307-7].

引用

页码：947 / 949

页数：3

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