Drift velocity peak and negative differential mobility in high field transport in graphene nanoribbons explained by numerical simulations

被引：16

作者：

Betti, A. ^{[1
]}

Fiori, G. ^{[1
]}

Iannaccone, G. ^{[1
]}

机构：

[1] Univ Pisa, Dipartimento Ingn Informaz Elettron, I-56122 Pisa, Italy

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 24期

关键词：

QUANTUM-WIRE STRUCTURES; MONTE-CARLO METHOD; SEMICONDUCTORS;

D O I：

10.1063/1.3664091

中图分类号：

O59 [应用物理学];

学科分类号：

070305 [高分子化学与物理];

摘要：

We present numerical simulations of high field transport in both suspended and deposited armchair graphene nanoribbon (A-GNR) on HfO2 substrate. Drift velocity in suspended GNR does not saturate at high electric field (F), but rather decreases, showing a maximum for F approximate to 10 kV/cm. Deposition on HfO2 strongly degrades the drift velocity by up to a factor approximate to 10 with respect to suspended GNRs in the low-field regime, whereas at high fields, drift velocity approaches the intrinsic value expected in suspended GNRs. Even in the assumption of perfect edges, the obtained mobility is far behind what expected in two-dimensional graphene, and is further reduced by surface optical phonons. (C) 2011 American Institute of Physics. [doi:10.1063/1.3664091]

引用

收藏

页数：3

相关论文

共 16 条

[1]

Strong mobility degradation in ideal graphene nanoribbons due to phonon scattering [J].

Betti, A. ;

Fiori, G. ;

Iannaccone, G. .

APPLIED PHYSICS LETTERS, 2011, 98 (21)

[2]

Atomistic Investigation of Low-Field Mobility in Graphene Nanoribbons [J].

Betti, Alessandro ;

Fiori, Gianluca ;

Iannaccone, Giuseppe .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (09) :2824-2830

[3]

Simple and efficient modeling of the E-k relationship and low-field mobility in Graphene Nano-Ribbons [J].

Bresciani, Marco ;

Palestri, Pierpaolo ;

Esseni, David ;

Selmi, Luca .

SOLID-STATE ELECTRONICS, 2010, 54 (09) :1015-1021

[4]

SIZE EFFECTS IN MULTISUBBAND QUANTUM WIRE STRUCTURES [J].

BRIGGS, S ;

LEBURTON, JP .

PHYSICAL REVIEW B, 1988, 38 (12) :8163-8170

[5]

Energy Dissipation in Graphene Field-Effect Transistors [J].

Freitag, Marcus ;

Steiner, Mathias ;

Martin, Yves ;

Perebeinos, Vasili ;

Chen, Zhihong ;

Tsang, James C. ;

Avouris, Phaedon .

NANO LETTERS, 2009, 9 (05) :1883-1888

[6]

Field-enhanced electron mobility by nonlinear phonon scattering of Dirac electrons in semiconducting graphene nanoribbons [J].

Huang, Danhong ;

Gumbs, Godfrey ;

Roslyak, O. .

PHYSICAL REVIEW B, 2011, 83 (11)

[7]

THE MONTE-CARLO METHOD FOR THE SOLUTION OF CHARGE TRANSPORT IN SEMICONDUCTORS WITH APPLICATIONS TO COVALENT MATERIALS [J].

JACOBONI, C ;

REGGIANI, L .

REVIEWS OF MODERN PHYSICS, 1983, 55 (03) :645-705

[8]

Surface polar phonon dominated electron transport in graphene [J].

Li, X. ;

Barry, E. A. ;

Zavada, J. M. ;

Nardelli, M. Buongiorno ;

Kim, K. W. .

APPLIED PHYSICS LETTERS, 2010, 97 (23)

[9]

DEGENERACY IN THE ENSEMBLE MONTE-CARLO METHOD FOR HIGH-FIELD TRANSPORT IN SEMICONDUCTORS [J].

LUGLI, P ;

FERRY, DK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) :2431-2437

[10]

ELECTRON HIGH-FIELD TRANSPORT IN MULTISUBBAND QUANTUM WIRE STRUCTURES [J].

MICKEVICIUS, R ;

MITIN, VV ;

KIM, KW ;

STROSCIO, MA .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (3B) :B299-B301