Atomistic Investigation of Low-Field Mobility in Graphene Nanoribbons

被引：38

作者：

Betti, Alessandro ^{[1
]}

Fiori, Gianluca ^{[1
]}

Iannaccone, Giuseppe ^{[1
]}

机构：

[1] Univ Pisa, Dipartimento Ingn Informaz, I-56100 Pisa, Italy

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2011年 / 58卷 / 09期

关键词：

Defects; edge roughness; graphene nanoribbons; impurities; low-field mobility; phonons; scattering; LIMITED MOBILITY; CONDUCTION;

D O I：

10.1109/TED.2010.2100045

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

080906 [电磁信息功能材料与结构]; 082806 [农业信息与电气工程];

摘要：

We have investigated the main scattering mechanisms affecting the mobility in graphene nanoribbons using detailed atomistic simulations. We have considered carrier scattering due to acoustic and optical phonons, edge roughness, single defects, and ionized impurities, and we have defined a methodology based on simulations of statistically meaningful ensembles of nanoribbon segments. Edge disorder heavily affects the mobility at room temperature in narrower nanoribbons, whereas charged impurities and phonons are hardly the limiting factors. Results are favorably compared with the few experiments available in the literature.

引用

页码：2824 / 2830

页数：7

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