Defect Scattering in Graphene

被引：510

作者：

Chen, Jian-Hao ^{[1
,2
]}

Cullen, W. G. ^{[2
]}

Jang, C. ^{[2
]}

Fuhrer, M. S. ^{[1
,2
]}

Williams, E. D. ^{[1
,2
]}

机构：

[1] Univ Maryland, Dept Phys, Mat Res Sci & Engn Ctr, College Pk, MD 20742 USA

[2] Univ Maryland, Dept Phys, Ctr Nanophys & Adv Mat, College Pk, MD 20742 USA

来源：

PHYSICAL REVIEW LETTERS | 2009年 / 102卷 / 23期

关键词：

SCANNING-TUNNELING-MICROSCOPY; GRAPHITE; TRANSPORT; FILMS; SIO2;

D O I：

10.1103/PhysRevLett.102.236805

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Irradiation of graphene on SiO(2) by 500 eV Ne and He ions creates defects that cause intervalley scattering as is evident from a significant Raman D band intensity. The defect scattering gives a conductivity proportional to charge carrier density, with mobility decreasing as the inverse of the ion dose. The mobility decrease is 4 times larger than for a similar concentration of singly charged impurities. The minimum conductivity decreases proportional to the mobility to values lower than 4e(2)/pi h, the minimum theoretical value for graphene free of intervalley scattering. Defected graphene shows a diverging resistivity at low temperature, indicating insulating behavior. The results are best explained by ion-induced formation of lattice defects that result in midgap states.

引用

页数：4

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