Gain in injection lasers based on self-organized quantum dots

被引：8

作者：

Kovsh, AR ^{[1
]}

Zhukov, AE ^{[1
]}

Egorov, AY ^{[1
]}

Ustinov, VM ^{[1
]}

Ledentsov, NN ^{[1
]}

Maksimov, MV ^{[1
]}

Tsatsul'nikov, AF ^{[1
]}

Kop'ev, PS ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 1999年 / 33卷 / 02期

关键词：

D O I：

10.1134/1.1187668

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The analytical form of the dependence of the gain on pump current density for lasers with an active region based on self-organized quantum dots is derived in a simple theoretical model. The proposed model is shown to faithfully describe experimental data obtained for laser diodes based on InGaAs quantum dots in an AlGaAs/GaAs matrix, as well as InAs quantum dots in an InGaAs/InP matrix. The previously observed gain saturation and switching of the lasing from the ground state to an excited state of the quantum dots are studied. The influence of the density of quantum-dot arrays on the threshold characteristics of lasers based on them is examined on the basis of this model. (C) 1999 American Institute of Physics. [S1063-7826(99)01302-2].

引用

页码：184 / 191

页数：8

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