Spectral shape analysis of ultraviolet luminescence in n-type ZnO:Ga -: art. no. 093520

被引：33

作者：

Makino, T

Segawa, Y

Yoshida, S

Tsukazaki, A

Ohtomo, A

Kawasaki, M

Koinuma, H

机构：

[1] RIKEN, Photodynam Res Ctr, Sendai, Miyagi 9800845, Japan

[2] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[3] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2005年 / 98卷 / 09期

关键词：

D O I：

10.1063/1.2127167

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin films of laser molecular-beam epitaxy grown n-type Ga-doped ZnO were investigated with respect to their optical properties. Intense room-temperature photoluminescence (PL) in the near-band edge (NBE) region was observed. Moreover, its broadening of PL band was significantly larger than predicted by theoretical results modeled in terms of potential fluctuations caused by the random distribution of donor impurities. In addition, the line shape was rather asymmetrical. To explain these features of the NBE bands, a vibronic model was developed accounting for contributions from a series of phonon replicas. (c) 2005 American Institute of Physics.

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