Self-limiting and pattern dependent oxidation of silicon dots fabricated on silicon-on-insulator material

被引：51

作者：

Heidemeyer, H ^{[1
]}

Single, C ^{[1
]}

Zhou, F ^{[1
]}

Prins, FE ^{[1
]}

Kern, DP ^{[1
]}

Plies, E ^{[1
]}

机构：

[1] Univ Tubingen, Inst Angew Phys, D-72076 Tubingen, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 09期

关键词：

D O I：

10.1063/1.373105

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a systematic investigation of the oxidation properties of Si dots fabricated on a silicon-on-insulator (SOI) wafer. Dots with diameters varying from 9 to 81 nm were structured on a SOI wafer. These dots were oxidized in a dry oxygen atmosphere at 700, 850, and 1000 degrees C. The resulting structures were investigated using a side view transmission electron microscopy (TEM) technique in combination with energy filtered TEM. The dimensions of the residual Si and the grown SiO2 were then extracted from the micrographs and analyzed. The oxidation appears to be retarded as compared to the well-known planar oxidation. At 700 and 850 degrees C a self-limiting effect is observed as well as a clear pattern dependent oxidation at 850 and 1000 degrees C. We attribute these effects to stress buildup in the oxide. The critical stress, causing the self-limiting effect, is calculated using a model that considers the decrease of the reaction rate with increasing stress perpendicular to the Si surface. (C) 2000 American Institute of Physics. [S0021-8979(00)02402-6].

引用

页码：4580 / 4585

页数：6

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