Isotopic effect between hydrogen and deuterium emission in silicon

被引：8

作者：

Biswas, R ^{[1
]}

Li, YP

Pan, BC

机构：

[1] Iowa State Univ, US DOE, Microelect Res Ctr, Dept Phys & Astron, Ames, IA 50011 USA

[2] Iowa State Univ, US DOE, Ames Lab, Ames, IA 50011 USA

[3] Univ Sci & Technol China, Dept Phys, Hefei 230026, Peoples R China

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2000年 / 266卷

关键词：

D O I：

10.1016/S0022-3093(99)00806-6

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We find an isotope effect between the breaking of SiH and SiD bands, using tight-binding molecular dynamics simulations. The vibrationally excited Si-D bending modes decay much more rapidly than Si-H bending modes, due to the coupling of SID modes with the interior silicon-phonon modes. The SiD bond is much more stable than the SiH bond. This stability explains the reduced degradation in deuterated metal-oxide-semiconductor (MOS) devices. For germanium, the GeD and GeH bonds have little difference in their stabilities since their vibrational frequencies are greater than the interior Ge-spectrum, consistent with this vibrational coupling model. (C) 2000 Elsevier Science B.V. All rights reserved.

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页码：176 / 179

页数：4

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