Structural and electrical characterization of porous silicon carbide formed in n-6H-SiC substrates

被引：15

作者：

Soloviev, S ^{[1
]}

Das, T ^{[1
]}

Sudarshan, TS ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2003年 / 6卷 / 02期

关键词：

D O I：

10.1149/1.1534733

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Investigation of porous silicon carbide layer morphology and its growth rate was studied along with electrical characterization. Morphology of the formed porous SiC layers was analyzed by scanning electron microscopy. The effective carrier density in porous layers was extracted from the capacitance-voltage characteristics of mercury probe Schottky contacts to the porous layer. It was found that the effective carrier density in porous layer and the pore density are in good correlation. (C) 2002 The Electrochemical Society.

引用

页码：G22 / G24

页数：3

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