Conducting-tip atomic force microscopy for injection and probing of localized charges in silicon nanocrystals

被引:25
作者
Banerjee, S [1 ]
Salem, MA [1 ]
Oda, S [1 ]
机构
[1] Tokyo Inst Technol, Res Ctr Quantum Effect Elect, Meguro Ku, Tokyo 1528552, Japan
关键词
D O I
10.1063/1.1624469
中图分类号
O59 [应用物理学];
学科分类号
摘要
A conducting-tip atomic force microscopy (AFM) is utilized to inject localized charges in an ensemble of closely packed nanocrystalline Si dots prepared by plasma decomposition of SiH4. A noncontact-mode topography imaging carried out to probe the charging effect indicates an increase in the apparent height of the Si nanocrystal. A generalized tip-sample force interaction model is also developed to quantitatively evaluate the deposited charge. The study prescribes that the presence of surface charges might result in an overestimation of the actual height of an object measured by AFM, which could be nontrivial for a nanomaterial in particular. (C) 2003 American Institute of Physics.
引用
收藏
页码:3788 / 3790
页数:3
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