Defect characterization of the structure-growth zone-model for sputter deposited Cu films

被引:2
作者
De Baerdemaeker, J
Dauwe, C
Segers, D
Detavernier, C
Deduytsche, D
Egger, W
Sperr, P
机构
[1] Univ Ghent, Dept Subatom & Radiat Phys, Ghent, Belgium
[2] IBM Corp, TJ Watson Res Ctr, New York, NY USA
[3] Univ Bundeswehr Munchen, Inst Nukl Festkorperphys, Neubiberg, Germany
来源
POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS | 2004年 / 445-6卷
关键词
room temperature grain growth; slow positron annihilation; sputter deposition; zone model;
D O I
10.4028/www.scientific.net/MSF.445-446.69
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The 'zone-model' for sputter deposited Cu films was analyzed by positron annihilation spectroscopy to give a valuable insight in the nature of the defects present in the different zones of the model. Both depth selective Doppler broadening and positron lifetime spectroscopy were applied using slow positron beams. Room temperature grain growth for films sputtered in the zone-T regime was also analyzed for the first time with positron annihilation spectroscopy.
引用
收藏
页码:69 / 71
页数:3
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