Room-temperature grain growth in sputter-deposited Cu films

被引：49

作者：

Detavernier, C ^{[1
]}

Deduytsche, D ^{[1
]}

Van Meirhaeghe, RL ^{[1
]}

De Baerdemaeker, J ^{[1
]}

Dauwe, C ^{[1
]}

机构：

[1] State Univ Ghent, B-9000 Ghent, Belgium

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 12期

关键词：

D O I：

10.1063/1.1563048

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The microstructure of sputter-deposited Cu films is shown to be unstable at room temperature (RT). The average grain size increases significantly during RT storage for a couple of hours after deposition. This RT grain growth is shown to be very dependent on the deposition parameters (substrate temperature and sputter gas pressure) and hence on the microstructure of the as-deposited film. The microstructure of sputter-deposited films is usually summarized in a structure-growth-zone model. It is found that significant RT grain growth only occurs for Cu layers with a zone-T-type, as-deposited microstructure. (C) 2003 American Institute of Physics.

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页码：1863 / 1865

页数：3

相关论文

共 11 条

[1] Two-step room temperature grain growth in electroplated copper [J].

Brongersma, SH ;

Richard, E ;

Vervoort, I ;

Bender, H ;

Vandervorst, W ;

Lagrange, S ;

Beyer, G ;

Maex, K .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (07) :3642-3645

[2] Room temperature self-annealing of electroplated and sputtered copper films [J].

Chen, M ;

Rengarajan, S ;

Hey, P ;

Dordi, Y ;

Zhang, H ;

Hashim, I ;

Ding, PJ ;

Chin, B .

ADVANCED INTERCONNECTS AND CONTACTS, 1999, 564 :413-420

[3] EFFECTS OF ARGON PRESSURE AND SUBSTRATE-TEMPERATURE ON THE STRUCTURE AND PROPERTIES OF SPUTTERED COPPER-FILMS [J].

CRAIG, S ;

HARDING, GL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (02) :205-215

[4] Microstructure control in semiconductor metallization [J].

Harper, JME ;

Rodbell, KP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (04) :763-779

[5] Mechanisms for microstructure evolution in electroplated copper thin films near room temperature [J].

Harper, JME ;

Cabral, C ;

Andricacos, PC ;

Gignac, L ;

Noyan, IC ;

Rodbell, KP ;

Hu, CK .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (05) :2516-2525

[6] In situ transmission electron microscope studies of the kinetics of abnormal grain growth in electroplated copper films [J].

Hau-Riege, SP ;

Thompson, CV .

APPLIED PHYSICS LETTERS, 2000, 76 (03) :309-311

[7] X-ray diffraction pole figure evidence for (111) sidewall texture of electroplated Cu in submicron damascene trenches [J].

Lingk, C ;

Gross, ME ;

Brown, WL .

APPLIED PHYSICS LETTERS, 1999, 74 (05) :682-684

[8] Recrystallization kinetics of electroplated Cu in damascene trenches at room temperature [J].

Lingk, C ;

Gross, ME .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (10) :5547-5553

[9] ROOM-TEMPERATURE RECRYSTALLIZATION IN THICK BIAS-SPUTTERED COPPER DEPOSITS [J].

PATTEN, JW ;

MCCLANAHAN, ED ;

JOHNSTON, JW .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) :4371-+

[10] Time development of microstructure and resistivity for very thin Cu films [J].

Rossnagel, SM ;

Kuan, TS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2002, 20 (06) :1911-1915