Device Modeling of Dye-Sensitized Solar Cells

被引:34
作者
Bisquert, Juan [1 ]
Marcus, Rudolph A. [2 ]
机构
[1] Univ Jaume 1, Dept Fis, Photovolta & Optoelect Devices Grp, Castellon de La Plana 12071, Spain
[2] CALTECH, Arthur Amos Noyes Lab Chem Phys, Pasadena, CA 91125 USA
来源
MULTISCALE MODELLING OF ORGANIC AND HYBRID PHOTOVOLTAICS | 2014年 / 352卷
关键词
Dye solar cell; Electron transport; Nanomaterials; Impedance spectroscopy; INTERFACIAL ELECTRON-TRANSFER; NANOSTRUCTURED SEMICONDUCTOR ELECTRODES; CURRENT-VOLTAGE CHARACTERISTICS; TRANSFER RATE CONSTANTS; OPEN-CIRCUIT VOLTAGE; NANOCRYSTALLINE TIO2; STEADY-STATE; CHARGE-TRANSPORT; MASS-TRANSPORT; LIGHT-SCATTERING;
D O I
10.1007/128_2013_471
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We review the concepts and methods of modeling of the dye-sensitized solar cell, starting from fundamental electron transfer theory, and using phenomenological transport-conservation equations. The models revised here are aimed at describing the components of the current-voltage curve of the solar cell, based on small perturbation experimental methods, and to such an end, a range of phenomena occurring in the nanoparticulate electron transport materials, and at interfaces, are covered. Disorder plays a major role in the definition of kinetic parameters, and we introduce single particle as well as collective function definitions of diffusion coefficient and electron lifetime. Based on these fundamental considerations, applied tools of analysis of impedance spectroscopy are described, and we outline in detail the theory of recombination via surface states that is successful to describe the measured recombination resistance and lifetime.
引用
收藏
页码:325 / 397
页数:73
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