Fabrication of vanadium oxide micro-optical switches

被引：62

作者：

Wang, HC ^{[1
]}

Yi, XJ

Chen, SH

Fu, XC

机构：

[1] Huazhong Univ Sci & Technol, Dept Optoelect Engineer, Wuhan 430074, Peoples R China

[2] Huazhong Univ Sci & Technol, State Key Lab Laser Technol, Wuhan 430074, Peoples R China

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2005年 / 122卷 / 01期

基金：

中国国家自然科学基金;

关键词：

optical switch; vanadium oxide thin film; semiconductor-to-metal phase transition; insertion loss;

D O I：

10.1016/j.sna.2005.03.063

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents an optical switch based on a vanadium dioxide VO2 thin film fabricated on quartz and Si substrates. Vanadium oxide thin films with 48 degrees C semiconducting-to-metal phase transition temperature are fabricated by reactive ion beam sputtering followed by a post-annealing process step. Optical tests at lambda = 1.55 mu m show that the insertion loss and contrast ratio of fabricated switches are 2 dB and more than 15 dB, respectively. Switching times under 1 ms have also been observed and the power consumption of an individual switch is less than 25 mW. (C) 2005 Elsevier B.V. All rights reserved.

引用

页码：108 / 112

页数：5

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