Interfacial stability and atomistic processes in the a-C/Si(100) heterostructure system

被引：22

作者：

Kelires, PC

Gioti, M

Logothetidis, S

机构：

[1] Univ Crete, Dept Phys, Heraklion 71003, Crete, Greece

[2] Fdn Res & Technol Hellas, Heraklion 71110, Crete, Greece

[3] Aristotelian Univ Salonika, Dept Phys, GR-54006 Salonika, Greece

来源：

PHYSICAL REVIEW B | 1999年 / 59卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.59.5074

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We study the interfacial properties of thin amorphous carbon films frown on silicon (100) substrate. By combining experimental spectroscopic ellipsometry and stress measurements and theoretical Monte Carlo simulations, we show that significant interdiffusion takes place at the initial stages of growth, driven by a strain mediated mechanism, and we identify the relevant atomistic processes. [S0163-1829(99)06507-8].

引用

页码：5074 / 5081

页数：8

共 20 条

[1]

Aspnes D. E., 1976, OPTICAL PROPERTIES S, P799

[2] OPTICAL-PROPERTIES OF THIN-FILMS [J].