Altering the nucleation of thermally annealed hydrogenated amorphous silicon with laser processing

被引：11

作者：

Dabney, M. S. ^{[1
]}

Parilla, P. A. ^{[1
]}

Gedvilas, L. M. ^{[1
]}

Mahan, A. H. ^{[1
]}

Ginley, D. S. ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 25期

关键词：

POLYCRYSTALLINE SILICON; EXCIMER-LASER; CRYSTALLIZATION; FILMS; DEPOSITION; GROWTH; GLASS;

D O I：

10.1063/1.3259654

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the use of laser processing to affect the nucleation of crystallites in thermally annealed hydrogenated amorphous silicon (a-Si:H) thin films. The influence of film H content and subcrystallization threshold laser fluence are investigated by x-ray diffraction measurements during in situ thermal annealing at 600 degrees C. All laser-treated films show a reduced incubation time for crystallization compared to as-grown films, with the largest differences exhibited for samples with higher film H and higher laser fluences. These results are consistent with multivacancy annihilation by laser processing, based upon a recently developed model for a nucleation center in a-Si: H. (C) 2009 American Institute of Physics. [doi:10.1063/1.3259654]

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页数：3

相关论文

共 13 条

[1]

BRANZ H, 2009, COMMUNICATION APR

[2] Excimer laser and rapid thermal annealing stimulation of solid-phase nucleation and crystallization in amorphous silicon films on glass substrates [J].

Efremov, MD ;

Bolotov, VV ;

Volodin, VA ;

Fedina, LI ;

Lipatnikov, EA .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1996, 8 (03) :273-286

[3] Behavior of hydrogen in excimer laser annealing of hydrogen-modulation-doped amorphous silicon layer [J].

Heya, Akira ;

Serikawa, Tadashi ;

Kawamoto, Naoya ;

Matsuo, Naoto .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (03) :1853-1857

[4] PHASE-TRANSFORMATION MECHANISMS INVOLVED IN EXCIMER-LASER CRYSTALLIZATION OF AMORPHOUS-SILICON FILMS [J].

IM, JS ;

KIM, HJ ;

THOMPSON, MO .

APPLIED PHYSICS LETTERS, 1993, 63 (14) :1969-1971

[5] RECRYSTALLIZATION OF AMORPHIZED POLYCRYSTALLINE SILICON FILMS ON SIO2 - TEMPERATURE-DEPENDENCE OF THE CRYSTALLIZATION PARAMETERS [J].

IVERSON, RB ;

REIF, R .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (05) :1675-1681

[6] Kinetics of laser-induced low-temperature crystallization of amorphous silicon [J].

Khait, YL ;

Beserman, R ;

Chack, A ;

Weil, R ;

Beyer, W .

APPLIED PHYSICS LETTERS, 2002, 81 (18) :3347-3349

[7] A comparison of grain nucleation and grain growth during crystallization of HWCVD and PECVD a-Si:H films [J].

Mahan, A. H. ;

Ahrenkiel, S. P. ;

Schropp, R. E. I. ;

Li, H. ;

Ginley, D. S. .

THIN SOLID FILMS, 2008, 516 (05) :529-532

[8] Identification of Nucleation Center Sites in Thermally Annealed Hydrogenated Amorphous Silicon [J].

Mahan, A. Harv ;

Su, Tining ;

Williamson, Don L. ;

Gedvilas, Lynn M. ;

Ahrenkiel, S. Phil ;

Parilla, Phillip A. ;

Xu, Yueqin ;

Ginley, David A. .

ADVANCED FUNCTIONAL MATERIALS, 2009, 19 (14) :2338-2344

[9] DEPOSITION OF DEVICE QUALITY, LOW H CONTENT AMORPHOUS-SILICON [J].

MAHAN, AH ;

CARAPELLA, J ;

NELSON, BP ;

CRANDALL, RS ;

BALBERG, I .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (09) :6728-6730

[10] Thin-film transistors deposited by hot-wire chemical vapor deposition [J].

Stannowski, B ;

Rath, JK ;

Schropp, REI .

THIN SOLID FILMS, 2003, 430 (1-2) :220-225