A comparison of grain nucleation and grain growth during crystallization of HWCVD and PECVD a-Si:H films

被引：26

作者：

Mahan, A. H. ^{[1
]}

Ahrenkiel, S. P. ^{[1
]}

Schropp, R. E. I. ^{[2
]}

Li, H. ^{[2
]}

Ginley, D. S. ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

[2] Univ Utrecht, Fac Sci, NL-3508 TA Utrecht, Netherlands

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 05期

关键词：

hydrogenated amorphous silicon; annealing; crystallization kinetics; crystallite nucleation; nuclear magnetic resonance;

D O I：

10.1016/j.tsf.2007.06.036

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

From TEM, XRD and Raman measurements, we compare the crystallization kinetics when HWCVD and PECVD a-Si:H films, containing different initial film hydrogen contents (C-H), are crystallized by annealing at 600 degrees C. For the HWCVD films, the nucleation rate increases, and the incubation time and the full width at half maximum (FWHM) of the XRD (111) peak decrease with decreasing film C-H. However, the crystallization kinetics of HWCVD and PECVD films of similar initial film C-H are quite different, suggesting that other factors beside the initial film hydrogen content affect the crystallization process. Even though the bonded hydrogen evolves very early from the film during annealing, we suggest that the initial spatial distribution of hydrogen plays a critical role in the crystallization kinetics, and we propose a preliminary model to describe this process. (C) 2007 Published by Elsevier B.V.

引用

页码：529 / 532

页数：4

共 21 条

[1]

AHRENKIEL SP, 2006, IN PRESS P 2006 MRS

[2] MULTIPLE-QUANTUM NMR-STUDY OF CLUSTERING IN HYDROGENATED AMORPHOUS-SILICON [J].