Sc modified multiferroic BiFeO3 thin films prepared through a sol-gel process

被引:126
作者
Shannigrahi, S. R.
Huang, A.
Chandrasekhar, N.
Tripathy, D.
Adeyeye, A. O.
机构
[1] Inst Mat Res & Engn, Singapore 117602, Singapore
[2] Natl Univ Singapore, Dept Elect & Comp Engn, Informat Storage Mat Lab, Singapore 117576, Singapore
关键词
D O I
10.1063/1.2430652
中图分类号
O59 [应用物理学];
学科分类号
摘要
Multiferroic thin films with the general formula BiFe1-xScxO3 (x=0.0, 0.1, 0.3, and 0.5 mol %) (BFS) were synthesized on Pt/Ti/SiO2/Si substrates through a sol-gel deposition method. From the x-ray diffraction (XRD) analysis, it was observed that the unit cell volume increased upon Sc doping up to 0.3 mol %. Impure phase appeared for the BFS (Sc: 0.5 mol %) films. Leakage current, ferroelectric, and magnetic properties were also found to improve for Sc doping up to 0.3 mol %. Room temperature magnetic coercive field for in-plane orientation of films showed the lowest value for BFS (Sc: 0.3 mol %) films, which indicates that BFS (Sc: 0.3 mol %) films were more magnetically soft. Room temperature value of the magnetodielectric effect in the presence of magnetic field of 8 kOe was found to have maximum of 3.36% for the BFS (Sc: 0.3 mol %) films. From the x-ray photoelectron spectroscopy measurements, it was observed that the Fe has mixed valency states of 2+ and 3+. The ratio of Fe2+ and Fe3+ was found to decrease slightly in BFS (Sc: 0.3 mol %) films. The improved leakage current and M-H loops support the authors' observation. (c) 2007 American Institute of Physics.
引用
收藏
页数:3
相关论文
共 14 条
[1]   Enhanced ferroelectric properties of Cr-doped BiFeO3 thin films grown by chemical solution deposition [J].
Kim, JK ;
Kim, SS ;
Kim, WJ ;
Bhalla, AS ;
Guo, R .
APPLIED PHYSICS LETTERS, 2006, 88 (13)
[2]   Study of room temperature magnetoelectric coupling in Ti substituted bismuth ferrite system [J].
Kumar, Manoj ;
Yadav, K. L. .
JOURNAL OF APPLIED PHYSICS, 2006, 100 (07)
[3]  
Lakovlev S., 2005, J APPL PHYS, V97
[4]   Low-temperature growth and interface characterization of BiFeO3 thin films with reduced leakage current -: art. no. 172901 [J].
Lee, YH ;
Wu, JM ;
Chueh, YL ;
Chou, LJ .
APPLIED PHYSICS LETTERS, 2005, 87 (17) :1-3
[5]   Effects of thickness on the piezoelectric and dielectric properties of lead zirconate titanate thin films [J].
Lian, L ;
Sottos, NR .
JOURNAL OF APPLIED PHYSICS, 2000, 87 (08) :3941-3949
[6]   Observation of saturated polarization and dielectric anomaly in magnetoelectric BiFeO3 thin films [J].
Palkar, VR ;
John, J ;
Pinto, R .
APPLIED PHYSICS LETTERS, 2002, 80 (09) :1628-1630
[7]  
Schmid H., 1994, Ferroelectrics, V162, P317, DOI 10.1080/00150199408245120
[8]  
Smolenskii G. A., 1982, Soviet Physics - Uspekhi, V25, P475, DOI 10.1070/PU1982v025n07ABEH004570
[9]   The phase formation and magnetodielectric property in (1-x)Bi2Fe4O9-xBaO composites [J].
Wang, D. H. ;
Ong, C. K. .
JOURNAL OF APPLIED PHYSICS, 2006, 100 (04)
[10]   Epitaxial BiFeO3 multiferroic thin film heterostructures [J].
Wang, J ;
Neaton, JB ;
Zheng, H ;
Nagarajan, V ;
Ogale, SB ;
Liu, B ;
Viehland, D ;
Vaithyanathan, V ;
Schlom, DG ;
Waghmare, UV ;
Spaldin, NA ;
Rabe, KM ;
Wuttig, M ;
Ramesh, R .
SCIENCE, 2003, 299 (5613) :1719-1722