Local gating of carbon nanotubes

被引：40

作者：

Biercuk, MJ ^{[1
]}

Mason, N ^{[1
]}

Marcus, CM ^{[1
]}

机构：

[1] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA

来源：

NANO LETTERS | 2004年 / 4卷 / 01期

关键词：

D O I：

10.1021/nl034696g

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Local effects of multiple electrostatic gates placed beneath carbon nanotubes grown by chemical vapor deposition (CVD) are reported. Single-walled carbon nanotubes were grown by CVD from Fe catalyst islands across thin Mo "finger gates" (similar to150 nm x 10 nm). Prior to tube growth, several finger gates were patterned lithographically and subsequently coated with a patterned high-kappa dielectric using low-temperature atomic layer deposition. Transport measurements demonstrate that local finger gates have an effect that is distinct from that of a global backgate.

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页码：1 / 4

页数：4

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