Gas fingerprinting using carbon nanotubes transistor arrays

This paper deals with the fabrication of carbon nanotube field effect transistors (CNTFETs) for gas sensing applications. Such devices exploit the extremely sensitive change of the Schottky barrier heights between carbon nanotubes (CNTs) and drain/source metal electrodes: the gas adsorption creates an interfacial dipole that modifies the metal work function and so the band bending and the height of the Schottky barrier at the contacts. Our aim is to achieve the fingerprinting of a specific gas using a CNTFET based sensor array. This fingerprinting concept is based on the fact that the change of the metal electrode work function strictly depends on the metal/gas interaction. Consequently the CNTFET transfer characteristics will change specifically as a function of this interaction. To demonstrate this new concept, we have fabricated arrays of CNTFETs with different metal contacts: Au, Pd, Ti and Pt. Using these transistors, we have shown that a particular gas, in our case DiMethyl-Methyl-Phosphonate (DMMP, a sarin simulant), interacts specifically with each metal: 1 ppm of DMMP (15 min of exposure) reduces the transistor ON current by about 20% for Pt contacted CNTFETs and by nearly one order of magnitude for Pd contacted CNTFETs. We believe that this new approach can be applied for highly selective sensing of various gases, using ultra-compact, room temperature and very low power devices.