Carbon nanotube transistor optimization by chemical control of the nanotube-metal interface

被引：30

作者：

Auvray, S ^{[1
]}

Borghetti, J

Goffman, MF

Filoramo, A

Derycke, V

Bourgoin, JP

Jost, O

机构：

[1] CEA Saclay, DSM, Lab Elect Mol, F-91191 Gif Sur Yvette, France

[2] Tech Univ Dresden, Inst Werkstoffwissensch, D-01062 Dresden, Germany

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 25期

关键词：

D O I：

10.1063/1.1762987

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Most carbon nanotube transistors work as Schottky barrier transistors. We show that chemical treatment of operational p-type nanotube transistors by trifluoro-acetic acid (TFA) leads to the drastic improvement of all the key device parameters. This effect is due to the highly polar nature of the TFA molecule which, once adsorbed at the metal-nanotube interface, lowers the Schottky barrier for the holes and thus favors their injection. (C) 2004 American Institute of Physics.

引用

页码：5106 / 5108

页数：3

共 27 条

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