Lateral oxidation of buried AlxGa1-xAs layers in a wet ambient

被引：33

作者：

Langenfelder, T

Schroder, S

Grothe, H

机构：

[1] Lehrst. F. Allg. Elektrotech. A., TU München, D-80290 München

来源：

JOURNAL OF APPLIED PHYSICS | 1997年 / 82卷 / 07期

关键词：

D O I：

10.1063/1.365758

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The lateral oxidation of buried AlxGa1-xAs layers with high Al content (x = 0.8-1) is investigated, using an oxidation process in a wet N-2+H2O ambient at 370-450 degrees C. The oxidation is clearly selective and significantly affected by process temperature, material composition, AlxGa1-xAs layer thickness, and the geometry of the oxidized structures. An asymptotic oxide growth with constant activation energies for the reactive process and for the transport mechanism is observed. The experimental oxidation behavior coincides well with a model of self-blocking pores. (C) 1997 American Institute of Physics.

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页码：3548 / 3551

页数：4

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