High-quality GaN on AlN multiple intermediate layer with migration enhanced epitaxy by rf-molecular beam epitaxy

被引：15

作者：

Sugihara, D ^{[1
]}

Kikuchi, A ^{[1
]}

Kusakabe, K ^{[1
]}

Nakamura, S ^{[1
]}

Toyoura, Y ^{[1
]}

Yamada, T ^{[1
]}

Kishino, K ^{[1
]}

机构：

[1] Sophia Univ, Dept Elect & Elect Engn, Chiyoda Ku, Tokyo 1028554, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2000年 / 39卷 / 3AB期

关键词：

GaN; AIN; migration enhanced epitaxy; rf-molecular beam epitaxy; AIN multiple intermediate layer;

D O I：

10.1143/JJAP.39.L197

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-speed GaN growth of 1.0 mu m/h with migration enhanced epitaxy (MEE) by molecular beam epitaxy using rf-plasma nitrogen (RF-MBE) was demonstrated. The electron mobility of MEE-GaN was 362 cm(2)/V.s for the electron density of 1.7 x 10(17) cm(-3) at room temperature. The threading dislocation density of MEE-GaN was estimated to be 1.0-3.0 x 10(10) cm(-2) based on the cross-sectional transmission electron microscope (TEM) image. The remarkable improvement of electrical properties was obtained by the introduction of a high-temperature (750 degrees C) grown AIN/GaN multiple intermediate layer (AIN-MIL). The cross-sectional TEM image showed that threading dislocations were bent or terminated at the AIN-MIL. The highest room temperature mobility of 668 cm(2)/V.s was obtained at the electron density of 9.5 x 10(16) cm(-3). The low-temperature peak mobility was 2340 cm(2)/V.s at 90 K.

引用

页码：L197 / L199

页数：3

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