High-speed GaN growth and compositional control of GaN-AlGaN superlattice quasi-ternary compounds by RF-radical source molecular beam epitaxy

被引：46

作者：

Kishino, K ^{[1
]}

Kikuchi, A ^{[1
]}

Yoshizawa, M ^{[1
]}

Fujita, N ^{[1
]}

Kushi, K ^{[1
]}

Sasamoto, H ^{[1
]}

机构：

[1] Sophia Univ, Dept Elect & Elect Engn, Chiyoda Ku, Tokyo 1028554, Japan

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 1998年 / 4卷 / 03期

基金：

日本学术振兴会;

关键词：

AlGaN; GaN; quasi-ternary compounds; RF-MBE superlattice;

D O I：

10.1109/2944.704116

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Novel growth technologies of III-nitrides for fabricating optical devices by molecular beam epitaxy using RF-plasma excited nitrogen (RF-MBE) were investigated. A relatively high-growth rate, up to 1.4 mu m/h of GaN with high-electrical and high-optical quality was obtained, The concept of AlGaN quasiternary (QT) compounds, consisting of GaN-AlGaN short period superlattice, was demonstrated and the Al composition was controlled with a shutter control method in the range of 0-0.47. Using the QT technology, a GaN-Al0.07Ga0.93N-Al0.3Ga0.7N multiquantum-well heterostructure was fabricated to show the effectiveness of the method.

引用

页码：550 / 556

页数：7

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