ZnIr2O4, a p-type transparent oxide semiconductor in the class of spinel zinc-d6-transition metal oxide

被引：157

作者：

Dekkers, Matthijn ^{[1
]}

Rijnders, Guus ^{[1
]}

Blank, Dave H. A. ^{[1
]}

机构：

[1] Univ Twente, MESA, Inst Nanotechnol, Fac Sci & Technol, NL-7500 AE Enschede, Netherlands

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 02期

关键词：

D O I：

10.1063/1.2431548

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report on the growth of spinel ZnM(d(6))(2)O-4 (M=Co, Rh, and Ir), a p-type wide band gap semiconductor by pulsed laser deposition. The band gap of these compounds is determined by the ligand field splitting in the subbands of the metallic d(6) cation. Photoemission spectroscopy revealed that the valence band maximum is composed of occupied t(2g)(6) states. The observed band gap is increasing for higher quantum numbers, being as large as similar to 3 eV for ZnIr2O4, which is expected from theoretical predictions. Grown in polycrystalline phase, films of these materials display high conductivity, well above 2 S cm(-1). (c) 2007 American Institute of Physics.

引用

页数：3

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