In-situ XRD on formation reactions of Cu2ZnSnS4 thin films

被引：60

作者：

Weber, Alfons ^{[1
]}

Mainz, Roland ^{[1
]}

Unold, Thomas ^{[1
]}

Schorr, Susan ^{[2
]}

Schock, Hans-Werner ^{[1
]}

机构：

[1] Helmholtz Inst Berlin Mat & Energie, Glienicker Str 100, D-14109 Berlin, Germany

[2] Free Univ Berlin, Dept Geosci, D-12249 Berlin, Germany

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 5 | 2009年 / 6卷 / 05期

关键词：

BILAYER PRECURSOR FILM; REACTION-KINETICS; PHASE-TRANSFORMATIONS; REAL-TIME;

D O I：

10.1002/pssc.200881231

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Starting from stacked binary sulphide precursor layers with X-ray diffraction. An evaluation of the reaction rates revealed copper and zinc-rich composition the formation of Cu2Zn2SnS4 (kesterite) has been investigated. Precursors with different layer thicknesses were deposited to evaluate the influence. of material transport on the reaction kinetics. During annealing experiments the formation of kesterite in the different. precursors was monitored by in-situ energy-dispersive that at a temperature of 500 degrees C a kesterite film of 2 mu m thickness can be formed within few minutes. The long annealing times reported in literature for well-performing kesterite photovoltaic absorbers do therefore not owe to a general kinetic limitation for the formation of kesterite thin films. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1245 / +

页数：2

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