Structure, surface morphological and opto-electronic properties of zinc sulphide thin films deposited by dip method

被引：20

作者：

Hankare, P. P. ^{[2
]}

Chate, P. A. ^{[1
]}

Sathe, D. J. ^{[3
]}

Patil, A. A. ^{[2
]}

机构：

[1] JSM Coll, Dept Chem, Alibag, MS, India

[2] Shivaji Univ, Dept Chem, Kolhapur, MS, India

[3] KITs Coll Engn, Dept Chem, Kolhapur, MS, India

来源：

APPLIED SURFACE SCIENCE | 2009年 / 256卷 / 01期

关键词：

Dip technique; X-ray diffraction; Surface morphology; Growth mechanism; CHEMICAL BATH DEPOSITION; SYNTHETIC ROUTE; LOW-TEMPERATURE; GROWTH;

D O I：

10.1016/j.apsusc.2009.07.068

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070305 [高分子化学与物理];

摘要：

ZnS thin films have been deposited by dip technique using succinic acid as a complexing agent. The structural and morphological characterizations of films have been investigated by X-ray diffraction, scanning electron microscope. X-ray pattern shows crystalline has hexagonal structure. The films show that good optical properties high absorption and band gap value was found to be 3.7 eV. The specific conductivity of the film was found to be in order of 10 (5) (Omega cm) (1) and showing n-type conduction. (C) 2009 Elsevier B. V. All rights reserved.

引用

页码：81 / 84

页数：4

共 26 条

[1]

The effect of the pH value on the growth and properties of chemical-bath-deposited ZnS thin films [J].