Novel chemical synthetic route and characterization of zinc selenide thin films

被引：27

作者：

Hankare, P. P. ^{[1
]}

Chate, P. A.

Delekar, S. D.

Asabe, M. R.

Mulla, I. S.

机构：

[1] Shivaji Univ, Dept Chem, Solid State Res Lab, Kolhapur 416004, Maharashtra, India

[2] Natl Chem Lab, Pune 411007, Maharashtra, India

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2006年 / 67卷 / 11期

关键词：

chalcogenides; electronic materials;

D O I：

10.1016/j.jpcs.2006.05.001

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Zinc selenide (ZnSe) thin film have been deposited using chemical bath method on non-conducting glass substrate in a tartarate bath containing zinc sulfate, ammonia, hydrazine hydrate, sodium selenosulfate in an aqueous alkaline medium at 333 K. The deposition parameter of the ZnSe thin film is interpreted in the present investigation. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), optical absorption, electrical measurements, atomic absorption spectroscopy (AAS). The ZnSe thin layers grown with polycrystalline zinc blende system along with some amorphous phase present in ZnSe film. The direct optical band gap 'E-g' for the film was found to be 2.81 eV and electrical conductivity in the order of 10(-8)(Omega cm)(-1) with n-type conduction mechanism. (c) 2006 Elsevier Ltd. All rights reserved.

引用

页码：2310 / 2315

页数：6

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