SiGe-on-insulator substrate fabricated by melt solidification for a strained-silicon complementary metal-oxide-semiconductor

被引：16

作者：

Sugii, N ^{[1
]}

Yamaguchi, S ^{[1
]}

Washio, K ^{[1
]}

机构：

[1] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2002年 / 20卷 / 05期

关键词：

D O I：

10.1116/1.1501576

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed a novel technique for fabricating completely strain-relaxed SiGe-on-insulator substrates. It features melt solidification to solve the problems of high defect density and a rough surface concerning SiGe substrates for a strained-silicon complementary metal-oxide-semiconductor. The technique involves three main steps: (1) growth of a SiGe layer on a silicon-on-insulator, (SOI) substrate, (2) SiO2 capping to prevent germanium evaporation during annealing, and (3) melting and solidifying the SiGe layer accompanied with germanium diffusion into the SOI layer. The defect density of the fabricated substrate is less than 1000 cm(-2) and its surface roughness is 0.39 nm (rms). (C) 2002 American Vacuum Society.

引用

页码：1891 / 1896

页数：6

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