IrO2/Pb(Zr,Ti1-x)O-3(PZT)/Pt ferroelectric thin-film capacitors resistant to hydrogen-annealing damage

被引：32

作者：

KushidaAbdelghafar, K

Miki, H

Yano, F

Fujisaki, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1997年 / 36卷 / 8A期

关键词：

Pb(ZrxTi1-x)O-3 ferroelectric capacitor; IrO2; electrode; hydrogen anneal; hysteresis curve;

D O I：

10.1143/JJAP.36.L1032

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The PZT polarization hysteresis characteristics in a Pt/PZT/Pt ferroelectric capacitor are degraded by annealing in a hydrogen-containing atmosphere due to the catalytic effect of the top Pt electrode. This can be avoided by using an IrO2/PZT/Pt capacitor structure as we proposed. During hydrogen annealing of the as-grown capacitor: the top IrO2 electrode is deoxidized. degrading the capacitor characteristics. However: the polarization hysteresis characteristics are preserved after hydrogen annealing at 300 degrees C if the IrO2/PZT/Pt capacitor is pre-annealed in oxygen at 600 degrees C.

引用

页码：L1032 / L1034

页数：3

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