Effect of O2 pressure on the synthesis of titanium oxide film by ion beam enhanced deposition

A series of titanium oxide films have been synthesized on silicon wafers by ion beam enhanced deposition at different O-2 pressures. X-ray Photoelectron Spectroscopy (XPS), X-ray Diffraction (XRD), Glancing Angle Diffraction and Rutherford Backscattering Spectroscopy (RBS) were used to analyze the composition, structure and orientation of the films. From the experimental results, it was found that: (1) the titanium oxide films synthesized at different O-2, pressures exhibit a polycrystal structure with preferred orientation; (2) when O-2 pressure is lower than 8.4 X 10(-4) Pa, the main composition of the film is TiO whose preferred orientation changed from (220) to (031) with the increase of O-2 pressure; (3) when O-2 pressure is higher than 8.4 X 10(-4) Pa, rutile-type TiO2 with (200) preferred orientation was found to be the major composition of the film. The higher the O-2 pressure is, the more stable the composition and preferred orientation become. (C) 2000 Elsevier Science B.V. All rights reserved.