Interfacial reactions of ultrahigh vacuum deposited Er-Si multilayer thin films

被引：4

作者：

Luo, CH ^{[1
]}

Chen, LJ ^{[1
]}

机构：

[1] NATL TSING HUA UNIV, DEPT MAT SCI & ENGN, HSINCHU, TAIWAN

来源：

APPLIED SURFACE SCIENCE | 1997年 / 113卷

关键词：

erbium silicide; multilayer; amorphous interlayer;

D O I：

10.1016/S0169-4332(96)00800-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Interfacial reactions of Er-Si multilayer thin films have been studied by conventional and high-resolution transmission electron microscopy as well as sheet resistance measurements. Completely amorphized Er-Si intermixing layers were found to form in all as-deposited multilayer samples. After low temperature annealing, the crystalline ErSi2-x was found to form in Si-rich amorphous alloys. On the other hand, both ErSi2-x and Er2O3 were found to form in Er-rich amorphous alloys. The ErSi2-x phase, which has the lowest activation energy to nucleate, is the preferred phase in the Er-Si interfacial reactions. The stability of amorphous alloys was found to increase with metal concentration.

引用

页码：556 / 561

页数：6