Gain spectroscopy on InGaN/GaN quantum well diodes

被引：49

作者：

Kuball, M

Jeon, ES

Song, YK

Nurmikko, AV

Kozodoy, P

Abare, A

Keller, S

Coldren, LA

Mishra, UK

DenBaars, SP

Steigerwald, DA

机构：

[1] BROWN UNIV, DEPT PHYS, PROVIDENCE, RI 02912 USA

[2] UNIV CALIF SANTA BARBARA, DEPT MAT & ELECT ENGN, SANTA BARBARA, CA 93106 USA

[3] HEWLETT PACKARD CORP, DIV OPTOELECT, SAN JOSE, CA 95131 USA

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 19期

关键词：

D O I：

10.1063/1.118925

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated spectroscopically the emergence of gain in InGaN/GaN quantum well diodes under high current injection (>kA/cm(2)). The spectral characteristics suggest that the electronic states responsible for blue laser action in this material an strongly influenced by the presence of microscopic crystalline disorder. (C) 1997 American Institute of Physics.

引用

页码：2580 / 2582

页数：3

共 13 条

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