Transparent flexible resistive random access memory fabricated at room temperature

被引：124

作者：

Seo, Jung Won ^{[1
]}

Park, Jae-Woo ^{[1
]}

Lim, Keong Su ^{[1
]}

Kang, Sang Jung ^{[1
]}

Hong, Yun Ho ^{[1
]}

Yang, Ji Hwan ^{[1
]}

Fang, Liang ^{[1
]}

Sung, Gun Yong ^{[2
]}

Kim, Han-Ki ^{[3
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect Engn, Taejon 305701, South Korea

[2] ETRI, IT Convergence Technol Res Lab, Biosensor Res Team, Taejon 305700, South Korea

[3] Kyung Hee Univ, Dept Display Mat Engn, Yongin 446701, Gyeonggi Do, South Korea

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 13期

关键词：

RESISTANCE;

D O I：

10.1063/1.3242381

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the room temperature fabrication of highly transparent and flexible resistive random access memory devices based on an ITO (indium tin oxide)/ZnO (zinc oxide)/ITO/Ag/ITO capacitor structure on a polyethersulfone flexible substrate. The ITO/Ag/ITO multilayered bottom electrode provides superior flexibility as well as high transparency compared to devices with ITO single bottom electrode during repetitive bending tests. The devices exhibit a high transmittance and the excellent reliability of data retention. Moreover, they show consistent memory performance, even under thermal stress. The results of this study provide a breakthrough solution for the era of transparent and flexible electronic systems in the near future. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3242381]

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