Coercive fields in ultrathin BaTiO3 capacitors

被引:64
作者
Jo, J. Y. [1 ]
Kim, Y. S.
Noh, T. W.
Yoon, Jong-Gul
Song, T. K.
机构
[1] Seoul Natl Univ, Dept Phys & Astron, ReCOE, Seoul 151747, South Korea
[2] Seoul Natl Univ, Dept Phys & Astron, FPRD, Seoul 151747, South Korea
[3] Univ Suwon, Dept Phys, Suwon 445743, Gyunggi Do, South Korea
[4] Cahngwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, Gyeongnam, South Korea
关键词
FERROELECTRIC THIN-FILMS; THICKNESS DEPENDENCE; PHASE-DIAGRAMS; LAYER;
D O I
10.1063/1.2402238
中图分类号
O59 [应用物理学];
学科分类号
摘要
Thickness-dependence of coercive field (E-C) was investigated in ultrathin BaTiO3 capacitors with thicknesses (d) between 30 and 5.0 nm. The E-C appears nearly independent of d below 15 nm, and decreases slowly as d increases above 15 nm. This behavior can be explained not by effects of interfacial passive layers or strain relaxation, but by domain nuclei formation models. Based on domain nuclei formation models, the observed E-C behavior is explainable via a quantitative level. A crossover of domain shape from a half-prolate spheroid to a cylinder is also suggested at d similar to 15 nm, exhibiting good agreement with experimental results. (c) 2006 American Institute of Physics.
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页数:3
相关论文
共 21 条
[11]   FERROELECTRIC PROPERTIES AND FATIGUE OF PBZR0.51TI0.49O3 THIN-FILMS OF VARYING THICKNESS - BLOCKING LAYER MODEL [J].
LARSEN, PK ;
DORMANS, GJM ;
TAYLOR, DJ ;
VANVELDHOVEN, PJ .
JOURNAL OF APPLIED PHYSICS, 1994, 76 (04) :2405-2413
[12]   DEPOLARIZATION FIELDS IN THIN FERROELECTRIC FILMS [J].
MEHTA, RR ;
SILVERMAN, BD ;
JACOBS, JT .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (08) :3379-3385
[13]   Comment on "Intrinsic ferroelectric coercive field" [J].
Moreira, RL .
PHYSICAL REVIEW LETTERS, 2002, 88 (17) :1-179702
[14]   First-principles investigation of 180 degrees domain walls in BaTiO3 [J].
Padilla, J ;
Zhong, W ;
Vanderbilt, D .
PHYSICAL REVIEW B, 1996, 53 (10) :R5969-R5973
[15]   Effect of mechanical boundary conditions on phase diagrams of epitaxial ferroelectric thin films [J].
Pertsev, NA ;
Zembilgotov, AG ;
Tagantsev, AK .
PHYSICAL REVIEW LETTERS, 1998, 80 (09) :1988-1991
[16]   Coercive field of ultrathin Pb(Zr0.52Ti0.48)O3 epitaxial films [J].
Pertsev, NA ;
Contreras, JR ;
Kukhar, VG ;
Hermanns, B ;
Kohlstedt, H ;
Waser, R .
APPLIED PHYSICS LETTERS, 2003, 83 (16) :3356-3358
[17]  
Scott J.F., 2013, Ferroelectric memories
[18]   Injection-controlled size effect on switching of ferroelectric thin films [J].
Tagantsev, AK ;
Stolichnov, IA .
APPLIED PHYSICS LETTERS, 1999, 74 (09) :1326-1328
[19]   IDENTIFICATION OF PASSIVE LAYER IN FERROELECTRIC THIN-FILMS FROM THEIR SWITCHING PARAMETERS [J].
TAGANTSEV, AK ;
LANDIVAR, M ;
COLLA, E ;
SETTER, N .
JOURNAL OF APPLIED PHYSICS, 1995, 78 (04) :2623-2630
[20]   Domain wall creep in epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 thin films -: art. no. 097601 [J].
Tybell, T ;
Paruch, P ;
Giamarchi, T ;
Triscone, JM .
PHYSICAL REVIEW LETTERS, 2002, 89 (09)